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2N4870

Central Semiconductor Corp

2N4870

Single BJT Transistors

RoHS: Compliant

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Specifications

Montaj Tipi
Through Hole
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Emitter Currentmax
50mA
Terminal Sayısı
3
Parça Durumu
Obsolete
Ambalaj
Bulk
Terminal Kaplaması
Tin/Lead (Sn/Pb)
Qualification Status
Not Qualified
Power Max
300mW
Yüzey Montaj
NO
Jesd30 Code
O-PBCY-T3
Kurşunsuz Kodu
no
Transistor Element Material
SILICON
Power Dissipationmax Abs
0.3W
Configuration
SINGLE
Kılıf / Paket
TO-226-3, TO-92-3 (TO-226AA)
Interbase Voltagemax
35V
Pin Sayısı
3
Number Of Elements
1
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Intrinsic Standoff Ratiomin
0.56
Peak Point Currentmax
5mA
Intrinsic Standoff Ratiomax
0.75
Static Interbase Resmin
4 kΩ
RoHS Durumu
RoHS Compliant
Static Interbase Resmax
9.1 kΩ
JESD-609 Kodu
e0
Transistor Application
SWITCHING
Valley Point Currentmin
2mA
Çalışma Sıcaklığı
-65°C~125°C TJ
Transistor Type
PNP
Yayın Yılı
2013
HTS Kodu
8541.21.00.95
Terminal Pozisyonu
BOTTOM
Nem Hassasiyeti (MSL)
Not Applicable

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