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C3 ChipZentronix

Central Semiconductor

2N6551 TIN/LEAD

Single BJT Transistors

RoHS: Compliant

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Specifications

Collector Base Voltage Vcbo
120 V
Pd Power Dissipation
1 W
Dc Current Gain Hfe Max
150 at 2 A, 2 V
Fabrika Paket Adedi
500
Configuration
Single
Emitter Base Voltage Vebo
6 V
Minimum Operating Temperature
- 65 C
Ambalaj
Bulk
Gain Bandwidth Product Ft
70 MHz
Kılıf / Paket
TO-39-3
RoHS
N
Collectoremitter Saturation Voltage
1 V
Montaj Stili
Through Hole
Collector Emitter Voltage Vceo Max
60 V
Transistor Polarity
NPN
Continuous Collector Current
5 A
Maks. Çalışma Sıcaklığı
+ 200 C
Dc Collectorbase Gain Hfe Min
40 at 2 A, 2 V
Seri
2N6551

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