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2N6431

Central Semiconductor

2N6431

Single BJT Transistors

RoHS: Compliant

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Specifications

Kurşunsuz
Lead Free
RoHS Durumu
RoHS Compliant
Emitter Base Voltage Vebo
6V
Montaj
Through Hole
Terminal Pozisyonu
BOTTOM
Collector Emitter Voltage Vceo
300V
Power Dissipation
1.8W
Transition Frequency
50MHz
Number Of Elements
1
ECCN Kodu
EAR99
Gain Bandwidth Product
50MHz
Kurşunsuz Kodu
no
Kılıf / Paket
TO-18
Radyasyon Dayanımı
No
Yayın Yılı
2001
Power Dissipation Max
500mW
Parça Durumu
Active
Collectoremitter Saturation Voltage
500mV
Min. Çalışma Sıcaklığı
-65°C
Terminal Kaplaması
Tin/Lead (Sn/Pb)
Ambalaj
Bulk
Terminal Sayısı
3
Maks. Çalışma Sıcaklığı
200°C
Element Configuration
Single
Hfemin
25
JESD-609 Kodu
e0
Collector Base Voltage Vcbo
300V
Transistor Application
AMPLIFIER
Max Collector Current
100mA
Pin Sayısı
3
Continuous Collector Current
450mA
Frekans
50MHz
Frequencymax
50MHz
Terminal Formu
WIRE
Polarity
NPN
Dc Current Gainmin Hfe
50

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