Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gain Bandwidth Product Ft
- 5 MHz
- Kılıf / Paket
- TO-66-2
- Collectoremitter Saturation Voltage
- 2 V
- RoHS
- Details
- Montaj Stili
- Through Hole
- Dc Collectorbase Gain Hfe Min
- 20 at 3 A, 4 V
- Seri
- 2N63
- Continuous Collector Current
- 6 A
- Maks. Çalışma Sıcaklığı
- + 200 C
- Transistor Polarity
- PNP
- Collector Emitter Voltage Vceo Max
- 60 V
- Pd Power Dissipation
- 40 W
- Collector Base Voltage Vcbo
- 70 V
- Configuration
- Single
- Fabrika Paket Adedi
- 30
- Dc Current Gain Hfe Max
- 100 at 3 A, 4 V
- Ambalaj
- Tube
- Emitter Base Voltage Vebo
- 5 V
- Minimum Operating Temperature
- - 65 C
Related Products
ON Semiconductor
12A02CH-TL-E
Single BJT Transistors
ON Semiconductor
12A02MH-TL-E
Single BJT Transistors
ON Semiconductor
15C01C-TB-E
Single BJT Transistors
Sanyo
15C01M-TL-E
Single BJT Transistors
ON Semiconductor
15C01SS-TL-E
Single BJT Transistors
ON Semiconductor
15C02CH-TL-E
Single BJT Transistors
ON Semiconductor
15C02MH-TL-E
Single BJT Transistors
Microchip Technology
2C2222A
Single BJT Transistors