2N6312 PBFREE

Specifications

Jedec95 Code

TO-66

Number Of Terminals

2

Kılıf / Paket

TO-66-2

Collector Base Voltage Vcbo

40 V

Dc Current Gainmin Hfe

4

Vcesatmax

4 V

Pd Power Dissipation

75 W

Operating Temperaturemin

-65 °C

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Rohs Code

Yes

Transistor Element Material

SILICON

Ihs Manufacturer

CENTRAL SEMICONDUCTOR CORP

Package Description

FLANGE MOUNT, O-MBFM-P2

Terminal Pozisyonu

BOTTOM

Collectoremitter Saturation Voltage

4 V

Case Connection

COLLECTOR

Continuous Collector Current

5 A

Power Dissipationmax Abs

75 W

Collector Emitter Voltage Vceo Max

40 V

Collector Currentmax Ic

5 A

Package Body Material

METAL

Transistor Application

SWITCHING

Jesd30 Code

O-MBFM-P2

Maks. Çalışma Sıcaklığı

+ 200 C

Seri

2N63

Gain Bandwidth Product Ft

4 MHz

Package Style

FLANGE MOUNT

REACH Uyumluluk Kodu

compliant

Montaj Stili

Through Hole

Package Shape

ROUND

Operating Temperaturemax

200 °C

JESD-609 Kodu

e3

Risk Rank

5.68

Reflow Temperaturemax S

NOT SPECIFIED

Polaritychannel Type

PNP

Number Of Elements

1

Dc Current Gain Hfe Max

100 at 1.5 A, 2 V

Yüzey Montaj

NO

RoHS

Details

Emitter Base Voltage Vebo

5 V