2N5415 PBFREE

Specifications

Polaritychannel Type

PNP

Pd Power Dissipation

1 W

Birim Ağırlık

0.071698 oz

JESD-609 Kodu

e3

Terminal Pozisyonu

BOTTOM

Maks. Çalışma Sıcaklığı

+ 200 C

Dc Current Gainmin Hfe

30

Collector Base Voltage Vcbo

200 V

Emitter Base Voltage Vebo

4 V

RoHS

Details

Minimum Operating Temperature

- 65 C

Terminal Kaplaması

Matte Tin (Sn)

Collectoremitter Voltagemax

200 V

Package Body Material

METAL

Configuration

Single

Terminal Formu

WIRE

Transition Frequencynom Ft

15 MHz

Üretici Parça No

2N5415PBFREE

REACH Uyumluluk Kodu

compliant

Operating Temperaturemin

-65 °C

Dc Current Gain Hfe Max

150

Jedec95 Code

TO-39

Number Of Terminals

3

Operating Temperaturemax

200 °C

Collectoremitter Saturation Voltage

2.5 V

Rohs Code

Yes

Dc Collectorbase Gain Hfe Min

30

Kılıf / Paket

TO-39

Fabrika Paket Adedi

500

Jesd30 Code

O-MBCY-W3

Transistor Element Material

SILICON

Gain Bandwidth Product Ft

15 MHz

Package Style

CYLINDRICAL

Power Dissipationmax Abs

1 W

Part Life Cycle Code

Active

Continuous Collector Current

1 A

Risk Rank

5.63

Package Description

CYLINDRICAL, O-MBCY-W3

Collector Currentmax Ic

1 A

Collector Emitter Voltage Vceo Max

200 V