2N5050 PBFREE

Specifications

Collectoremitter Saturation Voltage

5 V

Kılıf / Paket

TO-66-2

Fabrika Paket Adedi

30

Gain Bandwidth Product Ft

10 MHz

Seri

2N50

Package Description

FLANGE MOUNT, O-MBFM-P2

Transistor Polarity

NPN

Yüzey Montaj

NO

Pd Power Dissipation

40 W

Terminal Pozisyonu

BOTTOM

Maks. Çalışma Sıcaklığı

+ 175 C

Collector Base Voltage Vcbo

125 V

RoHS

Details

Operating Temperaturemin

-65 °C

Number Of Terminals

2

Operating Temperaturemax

175 °C

Dc Collectorbase Gain Hfe Min

25 at 750 mA, 5 V

Jesd30 Code

O-MBFM-P2

Package Style

FLANGE MOUNT

Transistor Element Material

SILICON

Power Dissipationmax Abs

40 W

Part Life Cycle Code

Active

Rise Timemax Tr

300 ns

Risk Rank

5.72

Continuous Collector Current

2 A

Collector Currentmax Ic

2 A

Collector Emitter Voltage Vceo Max

125 V

Number Of Elements

1

Package Shape

ROUND

Collectorbase Capacitancemax

250 pF

Ihs Manufacturer

CENTRAL SEMICONDUCTOR CORP

Ambalaj

Tube

Montaj Stili

Through Hole

Polaritychannel Type

NPN

Dc Current Gainmin Hfe

5

Emitter Base Voltage Vebo

6 V

Minimum Operating Temperature

- 65 C

Collectoremitter Voltagemax

125 V

Package Body Material

METAL

Fall Timemax Tf

1200 ns