Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Vgs Gatesource Breakdown Voltage
- 40 V
- RoHS
- Details
- Transistor Polarity
- N-Channel
- Ambalaj
- Bulk
- Pd Power Dissipation
- 1.8 W
- Drainsource Current At Vgs0
- 8 mA
- Maximum Drain Gate Voltage
- 40 V
- Montaj Stili
- Through Hole
- Fabrika Paket Adedi
- 2000
- Minimum Operating Temperature
- - 65 C
- Rds On Drainsource Resistance
- 80 Ohms
- Gatesource Cutoff Voltage
- 5 V
- Maks. Çalışma Sıcaklığı
- + 175 C
- Seri
- 2N4093
- Kılıf / Paket
- TO-18-3
- Configuration
- Single
Related Products
Microsemi
0150SC-1250M
JFETs Transistors
Central Semiconductor Corp
2N2608
JFETs Transistors
Microchip Technology
2N2608UB
JFETs Transistors
Microchip Technology
2N2608UB/TR
JFETs Transistors
Microsemi Corporation
2N2609
JFETs Transistors
Vishay
2N3819
JFETs Transistors
Central Semiconductor
2N3819 APM PBFREE
JFETs Transistors
Rochester Electronics
2N3819_Q
JFETs Transistors