2N3766 PBFREE

Specifications

Ihs Manufacturer

CENTRAL SEMICONDUCTOR CORP

Transistor Element Material

SILICON

Number Of Terminals

2

Pd Power Dissipation

25 W

Operating Temperaturemax

200 °C

Terminal Pozisyonu

BOTTOM

Kılıf / Paket

TO-66-2

Configuration

Single

Case Connection

COLLECTOR

Fabrika Paket Adedi

30

Üretici Parça No

2N3766PBFREE

Package Body Material

METAL

Package Style

FLANGE MOUNT

REACH Uyumluluk Kodu

compliant

Dc Current Gainmin Hfe

40

Maks. Çalışma Sıcaklığı

+ 200 C

Package Description

FLANGE MOUNT, O-MBFM-P2

Ambalaj

Tube

Number Of Elements

1

Transistor Polarity

NPN

Polaritychannel Type

NPN

Yüzey Montaj

NO

Operating Temperaturemin

-65 °C

Collectoremitter Saturation Voltage

2.5 V

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Part Life Cycle Code

Active

Collector Base Voltage Vcbo

80 V

Collector Currentmax Ic

4 A

Dc Collectorbase Gain Hfe Min

40 at 500 mA, 5 V

Montaj Stili

Through Hole

RoHS

Details

Vcesatmax

2.5 V

Collectorbase Capacitancemax

50 pF

Minimum Operating Temperature

- 65 C

Continuous Collector Current

4 A

Transistor Application

SWITCHING

Collectoremitter Voltagemax

60 V

Risk Rank

5.61

Gain Bandwidth Product Ft

10 MHz

Emitter Base Voltage Vebo

6 V