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2N2270

Central Semiconductor

2N2270

Single BJT Transistors

RoHS: Compliant

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Specifications

Gain Bandwidth Product
100MHz
Polarity
NPN
Max Collector Current
1A
Emitter Base Voltage Vebo
7V
Kurşunsuz
Lead Free
Hfemin
50
Parça Durumu
Active
RoHS Durumu
RoHS Compliant
Element Configuration
Single
Terminal Sayısı
3
Collectoremitter Saturation Voltage
900mV
Collector Emitter Voltage Vceo
900mV
Kurşunsuz Kodu
no
Number Of Elements
1
Yayın Yılı
2012
Collectoremitter Breakdown Voltage
45V
Terminal Pozisyonu
BOTTOM
Power Dissipation Max
1W
Pin Sayısı
3
Kılıf / Paket
TO-39
Qualification Status
Not Qualified
Terminal Kaplaması
Tin/Lead (Sn/Pb)
Collector Base Voltage Vcbo
60V
Jesd30 Code
O-MBCY-W3
Frequency Transition
100MHz
Transistor Application
SWITCHING
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Montaj
Through Hole
Dc Current Gainmin Hfe
50
Operating Temperature Max
200°C
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
JESD-609 Kodu
e0
Terminal Formu
WIRE
Transistor Element Material
SILICON
Transition Frequency
100MHz
ECCN Kodu
EAR99
Fabrika Tedarik Süresi
8 Weeks

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