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2N1613

Central Semiconductor

2N1613

Single BJT Transistors

RoHS: Compliant

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Specifications

Montaj
Through Hole
Dc Current Gainmin Hfe
20
Jesd30 Code
O-MBCY-W3
Collector Base Voltage Vcbo
75V
Frequency Transition
60MHz
Ambalaj
Bulk
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Transistor Application
SWITCHING
Terminal Formu
WIRE
Transition Frequency
60MHz
Fabrika Tedarik Süresi
8 Weeks
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
JESD-609 Kodu
e0
Collectoremitter Breakdown Voltage
50V
HTS Kodu
8541.21.00.95
Yayın Yılı
2012
Qualification Status
Not Qualified
Terminal Kaplaması
Tin/Lead (Sn/Pb)
Min. Çalışma Sıcaklığı
-65°C
Terminal Pozisyonu
BOTTOM
Power Dissipation Max
3W
Continuous Collector Current
500mA
Kılıf / Paket
TO-39
Collector Emitter Voltage Vceo
1.5V
Maks. Çalışma Sıcaklığı
150°C
Element Configuration
Single
Terminal Sayısı
3
Collectoremitter Saturation Voltage
1.5V
Kurşunsuz Kodu
no
Number Of Elements
1
Max Collector Current
500mA
Polarity
NPN
Emitter Base Voltage Vebo
7V
Gain Bandwidth Product
60MHz
RoHS Durumu
RoHS Compliant
Parça Durumu
Active
Hfemin
40

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