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Specifications
- Collector Emitter Voltage Vceo Max
- 30 V
- Transistor Polarity
- NPN
- Montaj Stili
- Through Hole
- Collector Base Voltage Vcbo
- 35 V
- Maks. Çalışma Sıcaklığı
- + 150 C
- Kılıf / Paket
- TO-92-3
- Pd Power Dissipation
- 625 mW
- Collectoremitter Saturation Voltage
- 500 mV
- Dc Collectorbase Gain Hfe Min
- 300 at 5 V, 0.1 mA
- Configuration
- Single
- Minimum Operating Temperature
- - 65 C
- Gain Bandwidth Product Ft
- 50 MHz
- Emitter Base Voltage Vebo
- 4.5 V
- Technology
- Si
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