Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Channel Mode
- Enhancement
- Birim Ağırlık
- 0.218699 oz
- Maks. Çalışma Sıcaklığı
- + 175 C
- Vds Drainsource Breakdown Voltage
- 1.2 kV
- Rds On Drainsource Resistance
- 100 mOhms
- Number Of Channels
- 1 Channel
- Vgs Gatesource Voltage
- - 10 V, + 23 V
- Montaj Stili
- SMD/SMT
- Kılıf / Paket
- D3PAK-3
- Ambalaj
- Tube
- Vgs Th Gatesource Threshold Voltage
- 1.8 V
- RoHS
- Details
- Id Continuous Drain Current
- 35 A
- Transistor Polarity
- N-Channel
- Qg Gate Charge
- 64 nC
- Fabrika Paket Adedi
- 1
- Minimum Operating Temperature
- - 55 C
- Pd Power Dissipation
- 182 W
- Configuration
- Single
Related Products
ON Semiconductor
1HN04CH-TL-W
Single MOSFETs Transistors
ON Semiconductor
1HP04CH-TL-W
Single MOSFETs Transistors
Microchip Technology
2N6660
Single MOSFETs Transistors
Microchip Technology
2N6661
Single MOSFETs Transistors
Infineon
2N6788
Single MOSFETs Transistors
ON Semiconductor
2N7000-D26Z
Single MOSFETs Transistors
Microchip Technology
2N7000-G
Single MOSFETs Transistors
ON Semiconductor
2N7000BU
Single MOSFETs Transistors