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Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Qg Gate Charge
- 220 nC
- Typical Turnoff Delay Time
- 100 ns
- Genişlik
- 20.5 mm
- Tradename
- Power MOS 8
- Fabrika Paket Adedi
- 1
- Id Continuous Drain Current
- 56 A
- Typical Turnon Delay Time
- 38 ns
- Birim Ağırlık
- 0.352740 oz
- Uzunluk
- 26.49 mm
- Kılıf / Paket
- TO-264-3
- Ambalaj
- Tube
- Minimum Operating Temperature
- - 55 C
- Vgs Gatesource Voltage
- - 30 V, + 30 V
- Vds Drainsource Breakdown Voltage
- 500 V
- Fall Time
- 33 ns
- Transistor Polarity
- N-Channel
- Rise Time
- 45 ns
- Forward Transconductance Min
- 43 S
- Montaj Stili
- Through Hole
- Maks. Çalışma Sıcaklığı
- + 150 C
- Channel Mode
- Enhancement
- Yükseklik
- 5.21 mm
- Pd Power Dissipation
- 780 W
- Vgs Th Gatesource Threshold Voltage
- 4 V
- Rds On Drainsource Resistance
- 85 mOhms
- RoHS
- Details
- Number Of Channels
- 1 Channel
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