Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Ambalaj
- Tube
- Configuration
- Single
- Transistor Polarity
- N-Channel
- Fall Time
- 7 ns
- Vds Drainsource Breakdown Voltage
- 300 V
- Minimum Operating Temperature
- - 55 C
- Vgs Gatesource Voltage
- - 30 V, + 30 V
- Rise Time
- 10 ns
- Pd Power Dissipation
- 300 W
- Yükseklik
- 5.31 mm
- Channel Mode
- Enhancement
- Maks. Çalışma Sıcaklığı
- + 150 C
- Montaj Stili
- Through Hole
- Number Of Channels
- 1 Channel
- Rds On Drainsource Resistance
- 85 mOhms
- RoHS
- Details
- Vgs Th Gatesource Threshold Voltage
- 4 V
- Qg Gate Charge
- 130 nC
- Genişlik
- 16.26 mm
- Typical Turnoff Delay Time
- 43 ns
- Tradename
- Power MOS V
- Fabrika Paket Adedi
- 1
- Typical Turnon Delay Time
- 12 ns
- Id Continuous Drain Current
- 40 A
- Kılıf / Paket
- TO-247-3
- Uzunluk
- 21.46 mm
- Birim Ağırlık
- 0.211644 oz
Related Products
ON Semiconductor
1HN04CH-TL-W
Single MOSFETs Transistors
ON Semiconductor
1HP04CH-TL-W
Single MOSFETs Transistors
Microchip Technology
2N6660
Single MOSFETs Transistors
Microchip Technology
2N6661
Single MOSFETs Transistors
In Stock
Infineon
2N6788
Single MOSFETs Transistors
ON Semiconductor
2N7000-D26Z
Single MOSFETs Transistors
Microchip Technology
2N7000-G
Single MOSFETs Transistors
ON Semiconductor
2N7000BU
Single MOSFETs Transistors