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RoHS
Compliant
Support
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Specifications
- Channel Mode
- Enhancement
- Vgs Gatesource Voltage
- - 30 V, + 30 V
- Fall Time
- 33 ns
- Forward Transconductance Min
- 34 S
- Montaj Stili
- Through Hole
- Pd Power Dissipation
- 1.04 kW
- RoHS
- Details
- Configuration
- Single
- Rise Time
- 35 ns
- Transistor Polarity
- N-Channel
- Birim Ağırlık
- 0.208116 oz
- Fabrika Paket Adedi
- 1
- Vgs Th Gatesource Threshold Voltage
- 4 V
- Typical Turnon Delay Time
- 39 ns
- Number Of Channels
- 1 Channel
- Minimum Operating Temperature
- - 55 C
- Kılıf / Paket
- T-MAX-3
- Maks. Çalışma Sıcaklığı
- + 150 C
- Ambalaj
- Tube
- Vds Drainsource Breakdown Voltage
- 1 kV
- Id Continuous Drain Current
- 30 A
- Qg Gate Charge
- 260 nC
- Rds On Drainsource Resistance
- 440 mOhms
- Typical Turnoff Delay Time
- 130 ns
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