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C3 ChipZentronix

Aptina

NSVMMUN2235LT1G

Pre-Biased BJT Transistors

In StockRoHS: Compliant

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Specifications

Package Type
SOT-23
Terminal Formu
GULL WING
Resistor Emitter Base R2
47 k Ω
Parça Durumu
Active
Collector Emitter Voltage Vceo
250mV
Nem Hassasiyeti (MSL)
1 (Unlimited)
Emittercollector Voltage Max
50(V)
Resistor Base R1
2.2 k Ω
Terminal Pozisyonu
DUAL
Transistor Element Material
SILICON
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Kurşunsuz
Lead Free
RoHS Durumu
ROHS3 Compliant
Power Dissipation
0.4(W)
Yayın Yılı
2013
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Fabrika Tedarik Süresi
4 Weeks
Transistor Application
SWITCHING
Transistor Type
NPN - Pre-Biased
Max Power Dissipation
246mW
Kılıf / Paket
TO-236-3, SC-59, SOT-23-3
Vce Saturation Max Ib Ic
250mV @ 1mA, 10mA
Power Max
246mW
Configuration
Single
Seri
Automotive, AEC-Q101
Montaj Tipi
Surface Mount
Collectoremitter Breakdown Voltage
50V
Typical Resistor Ratio
0.047
JESD-609 Kodu
e3
Typical Input Resistor
2.2
Dc Current Gain
80
Kurşunsuz Kodu
yes
Dc Current Gain Hfe Min Ic Vce
80 @ 5mA 10V
Max Collector Current
100mA
Tip
NPN
Polaritychannel Type
NPN
Current Collector Cutoff Max
500nA
Jesd30 Code
R-PDSO-G3
Montaj
Surface Mount
Lifecycle Status
ACTIVE (Last Updated: 11 hours ago)

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