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Specifications
- Resistor Base R1
- 47 k Ω
- Number Of Elements
- 1
- Yükseklik
- 940μm
- Resistor Emitter Base R2
- 47 k Ω
- Temel Parça No
- MMUN22**L
- Reach Svhc
- No SVHC
- Terminal Pozisyonu
- DUAL
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Max Breakdown Voltage
- 50V
- Genişlik
- 1.3mm
- Max Output Current
- 100mA
- Max Collector Current
- 100mA
- Pin Sayısı
- 3
- JESD-609 Kodu
- e3
- Dc Current Gain Hfe Min Ic Vce
- 80 @ 5mA 10V
- Radyasyon Dayanımı
- No
- Max Power Dissipation
- 246mW
- Yüzey Montaj
- YES
- Transistor Application
- SWITCHING
- ECCN Kodu
- EAR99
- Kurşunsuz Kodu
- yes
- Fabrika Tedarik Süresi
- 4 Weeks
- Hfemin
- 80
- Additional Feature
- BUILT-IN BIAS RESISTOR RATIO IS 1
- Akım Değeri
- 100mA
- Min. Çalışma Sıcaklığı
- -55°C
- Contact Plating
- Tin
- Transistor Type
- NPN - Pre-Biased
- Terminal Formu
- GULL WING
- Vce Saturation Max Ib Ic
- 250mV @ 300μA, 10mA
- Collectoremitter Breakdown Voltage
- 50V
- Voltage Rated Dc
- 50V
- Uzunluk
- 2.9mm
- Seri
- *
- Montaj Tipi
- Surface Mount
- Maks. Çalışma Sıcaklığı
- 150°C
- Pin Sayısı
- 3
- Collectoremitter Saturation Voltage
- 250mV
- Power Dissipation
- 246mW
- Tepe Reflow Süresi (maks. sn)
- 40
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