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AMI Semiconductor

DTC143TM3T5G

Pre-Biased BJT Transistors

RoHS: Compliant

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Specifications

Yüzey Montaj
YES
Ambalaj
Cut Tape (CT)
Vce Saturation Max Ib Ic
250mV @ 1mA, 10mA
Uzunluk
1.25mm
Terminal Sayısı
3
Power Dissipation
260mW
Yayın Yılı
2006
Nem Hassasiyeti (MSL)
1 (Unlimited)
Collectoremitter Saturation Voltage
250mV
Power Max
260mW
Transistor Type
NPN - Pre-Biased
Max Power Dissipation
260mW
Kurşunsuz Kodu
yes
Terminal Pozisyonu
DUAL
Terminal Kaplaması
Tin (Sn)
Dc Current Gain Hfe Min Ic Vce
160 @ 5mA, 10V
Max Collector Current
100mA
Collectoremitter Breakdown Voltage
50V
Voltage Collector Emitter Breakdown Max
50V
JESD-609 Kodu
e3
Maks. Çalışma Sıcaklığı
150°C
Genişlik
850μm
Resistor Base R1
4.7 kOhms
Continuous Collector Current
100mA
Pin Sayısı
3
Yükseklik
550μm
Akım Değeri
100mA
Additional Feature
BUILT-IN BIAS RESISTOR
Voltage Rated Dc
50V
Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Hfemin
160
Kılıf / Paket
SOT-723
Parça Durumu
Active
Current Collector Cutoff Max
500nA
Montaj Tipi
Surface Mount
RoHS Durumu
ROHS3 Compliant
ECCN Kodu
EAR99
Max Breakdown Voltage
50V
Tepe Reflow Sıcaklığı (°C)
260
Other Names
DTC143TM3T5GOSCT

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