Volume pricing
- 1+ pcs$0.30
- 10+ pcs$0.28
- 100+ pcs$0.27
- 500+ pcs$0.25
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate To Source Voltage Vgs
- 30V
- Power Dissipation Max
- 56.8W Tc
- Pulsed Drain Currentmax Idm
- 8A
- Drive Voltage Max Rds On Min Rds On
- 10V
- Ds Breakdown Voltagemin
- 600V
- Yayın Yılı
- 2010
- Number Of Elements
- 1
- Power Dissipation
- 56.8W
- Terminal Pozisyonu
- SINGLE
- Çalışma Sıcaklığı
- -50°C~150°C TJ
- Transistor Element Material
- SILICON
- Continuous Drain Current Id
- 2A
- Ambalaj
- Tube
- Input Capacitance Ciss Max Vds
- 325pF @ 25V
- Parça Durumu
- Active
- Vgs Max
- ±30V
- Kılıf / Paket
- TO-251-3 Short Leads, IPak, TO-251AA
- Pin Sayısı
- 3
- Drain To Source Voltage Vdss
- 600V
- Configuration
- SINGLE WITH BUILT-IN DIODE
- RoHS Durumu
- ROHS3 Compliant
- Operating Mode
- ENHANCEMENT MODE
- Fabrika Tedarik Süresi
- 18 Weeks
- Drain Currentmax Abs Id
- 2A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj Tipi
- Through Hole
- Current Continuous Drain Id25
- 2A Tc
- Vgsth Max Id
- 4.5V @ 250μA
- Montaj
- Through Hole
- Transistor Application
- SWITCHING
- Rds On Max Id Vgs
- 4.4 Ω @ 1A, 10V
- Terminal Sayısı
- 3
- Pin Sayısı
- 3
- Fet Type
- N-Channel
- Gate Charge Qg Max Vgs
- 11nC @ 10V
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