Volume pricing
- 1+ pcs$3.81
- 10+ pcs$3.59
- 100+ pcs$3.39
- 500+ pcs$3.20
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Operating Mode
- ENHANCEMENT MODE
- RoHS Durumu
- ROHS3 Compliant
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Seri
- aMOS™
- Drain To Source Voltage Vdss
- 600V
- Pin Sayısı
- 3
- Kılıf / Paket
- TO-220-3 Full Pack
- Vgs Max
- ±30V
- Parça Durumu
- Not For New Designs
- Ambalaj
- Tube
- Continuous Drain Current Id
- 20A
- Transistor Element Material
- SILICON
- Input Capacitance Ciss Max Vds
- 1038pF @ 100V
- Terminal Pozisyonu
- SINGLE
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Yayın Yılı
- 2009
- Number Of Elements
- 1
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Pulsed Drain Currentmax Idm
- 80A
- Ds Breakdown Voltagemin
- 600V
- Drive Voltage Max Rds On Min Rds On
- 10V
- Gate To Source Voltage Vgs
- 30V
- Power Dissipation Max
- 37.8W Tc
- Gate Charge Qg Max Vgs
- 19.8nC @ 10V
- Fet Type
- N-Channel
- Rds On Max Id Vgs
- 199m Ω @ 10A, 10V
- Terminal Sayısı
- 3
- Jedec95 Code
- TO-220AB
- Transistor Application
- SWITCHING
- Montaj
- Through Hole
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Current Continuous Drain Id25
- 20A Tc
- Vgsth Max Id
- 4.1V @ 250μA
- Montaj Tipi
- Through Hole
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fabrika Tedarik Süresi
- 16 Weeks
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