AON7421

Specifications

RoHS Durumu

ROHS3 Compliant

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

Gate To Source Voltage Vgs

12V

Fabrika Tedarik Süresi

18 Weeks

Operating Mode

ENHANCEMENT MODE

Fet Type

P-Channel

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Element Material

SILICON

Drain To Source Voltage Vdss

20V

Terminal Pozisyonu

DUAL

Rds On Max Id Vgs

4.6m Ω @ 20A, 10V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Continuous Drain Current Id

50A

Input Capacitance Ciss Max Vds

4550pF @ 10V

Power Dissipation Max

6.2W Ta 83W Tc

Current Continuous Drain Id25

30A Ta 50A Tc

JESD-609 Kodu

e3

Montaj Tipi

Surface Mount

Number Of Elements

1

Yayın Yılı

2011

Vgs Max

±12V

Drainsource On Resistancemax

0.009Ohm

Transistor Application

SWITCHING

Pin Sayısı

8

Ambalaj

Tape & Reel (TR)

Vgsth Max Id

1.2V @ 250μA

Gate Charge Qg Max Vgs

114nC @ 10V

Kılıf / Paket

8-PowerWDFN

REACH Uyumluluk Kodu

not_compliant

Terminal Sayısı

5

ECCN Kodu

EAR99

Power Dissipation

83W

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pulsed Drain Currentmax Idm

200A

Jesd30 Code

S-PDSO-F5

Ds Breakdown Voltagemin

20V

Terminal Kaplaması

Matte Tin (Sn)

Drive Voltage Max Rds On Min Rds On

2.5V 10V