AON6358

Specifications

Fet Type

N-Channel

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Pozisyonu

DUAL

Rds On Max Id Vgs

2.2m Ω @ 20A, 10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Drain To Source Voltage Vdss

30V

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

18 Weeks

Case Connection

DRAIN

RoHS Durumu

ROHS3 Compliant

Configuration

SINGLE WITH BUILT-IN DIODE

Yayın Yılı

2011

Montaj Tipi

Surface Mount

Number Of Elements

1

Vgs Max

±20V

Input Capacitance Ciss Max Vds

2200pF @ 15V

Continuous Drain Current Id

85A

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Current Continuous Drain Id25

42A Ta 85A Tc

Power Dissipation Max

6.2W Ta 48W Tc

Kılıf / Paket

8-PowerSMD, Flat Leads

Gate Charge Qg Max Vgs

47nC @ 10V

Terminal Sayısı

5

Drainsource On Resistancemax

0.0036Ohm

Vgsth Max Id

2.2V @ 250μA

Ambalaj

Tape & Reel (TR)

Transistor Application

SWITCHING

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Ds Breakdown Voltagemin

30V

Parça Durumu

Active

Montaj

Surface Mount

Avalanche Energy Rating Eas

63 mJ

Jesd30 Code

R-PDSO-F5

Kurşunsuz Kodu

yes

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pulsed Drain Currentmax Idm

230A