Volume pricing
- 1+ pcs$0.45
- 10+ pcs$0.42
- 100+ pcs$0.40
- 500+ pcs$0.38
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Drive Voltage Max Rds On Min Rds On
- 10V
- Montaj
- Through Hole
- Montaj Tipi
- Through Hole
- Jesd30 Code
- R-PSIP-T3
- Terminal Pozisyonu
- SINGLE
- Drain Currentmax Abs Id
- 4A
- RoHS Durumu
- ROHS3 Compliant
- Fabrika Tedarik Süresi
- 18 Weeks
- Operating Mode
- ENHANCEMENT MODE
- Pin Sayısı
- 3
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Avalanche Energy Rating Eas
- 235 mJ
- Çalışma Sıcaklığı
- -50°C~150°C TJ
- Terminal Sayısı
- 3
- Vgs Max
- ±30V
- Transistor Element Material
- SILICON
- Number Of Elements
- 1
- Vgsth Max Id
- 4.5V @ 250μA
- Parça Durumu
- Active
- Power Dissipation Max
- 104W Tc
- Kılıf / Paket
- TO-251-3 Stub Leads, IPak
- Fet Type
- N-Channel
- Ds Breakdown Voltagemin
- 600V
- Continuous Drain Current Id
- 4A
- Ambalaj
- Tube
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Application
- SWITCHING
- Input Capacitance Ciss Max Vds
- 640pF @ 25V
- Current Continuous Drain Id25
- 4A Tc
- Rds On Max Id Vgs
- 2.3 Ω @ 2A, 10V
- Drain To Source Voltage Vdss
- 600V
- Jedec95 Code
- TO-251A
- Gate Charge Qg Max Vgs
- 14.5nC @ 10V
- Yayın Yılı
- 2011
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