AOD508

Specifications

Transistor Element Material

SILICON

Vgs Max

±20V

Number Of Elements

1

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Avalanche Energy Rating Eas

68 mJ

Configuration

SINGLE WITH BUILT-IN DIODE

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Sayısı

2

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

18 Weeks

Montaj

Surface Mount

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Montaj Tipi

Surface Mount

Jesd30 Code

R-PSSO-G2

Terminal Pozisyonu

SINGLE

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2011

Power Dissipation

50W

REACH Uyumluluk Kodu

not_compliant

Case Connection

DRAIN

Gate Charge Qg Max Vgs

49nC @ 10V

Transistor Application

SWITCHING

Input Capacitance Ciss Max Vds

2010pF @ 15V

Terminal Kaplaması

Matte Tin (Sn)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tape & Reel (TR)

Continuous Drain Current Id

70A

JESD-609 Kodu

e3

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Current Continuous Drain Id25

22A Ta 70A Tc

Rds On Max Id Vgs

3m Ω @ 20A, 10V

Drain To Source Voltage Vdss

30V

Terminal Formu

GULL WING

Vgsth Max Id

2.2V @ 250μA

ECCN Kodu

EAR99

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Parça Durumu

Active

Power Dissipation Max

2.5W Ta 50W Tc

Fet Type

N-Channel