AOD407

Specifications

Case Connection

DRAIN

Gate Charge Qg Max Vgs

20nC @ 10V

Power Dissipation

2.5W

Yükseklik

2.388mm

Yayın Yılı

2011

Fet Type

P-Channel

Gate To Source Voltage Vgs

20V

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Parça Durumu

Active

Power Dissipation Max

2.5W Ta 50W Tc

Vgsth Max Id

3V @ 250μA

ECCN Kodu

EAR99

Terminal Formu

GULL WING

Current Continuous Drain Id25

12A Tc

Rds On Max Id Vgs

115m Ω @ 12A, 10V

Drain To Source Voltage Vdss

60V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Input Capacitance Ciss Max Vds

1185pF @ 30V

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tape & Reel (TR)

Continuous Drain Current Id

12A

Ds Breakdown Voltagemin

60V

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Sayısı

2

Configuration

SINGLE WITH BUILT-IN DIODE

Pin Sayısı

3

Max Junction Temperature Tj

175°C

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Number Of Elements

1

Transistor Element Material

SILICON

Vgs Max

±20V

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PSSO-G2

Terminal Pozisyonu

SINGLE

Pin Sayısı

3

Montaj Tipi

Surface Mount

Montaj

Surface Mount

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Operating Mode

ENHANCEMENT MODE