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AOD1N60

Alpha & Omega Semiconductor Inc.

AOD1N60

Single MOSFETs Transistors

RoHS: Compliant

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Specifications

Vgsth Max Id
4.5V @ 250μA
Kurşunsuz
Lead Free
Gate To Source Voltage Vgs
30V
Fet Type
N-Channel
Number Of Channels
1
Kılıf / Paket
TO-252-3, DPak (2 Leads + Tab), SC-63
Parça Durumu
Active
Power Dissipation Max
45W Tc
Input Capacitance Ciss Max Vds
160pF @ 25V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Ambalaj
Tape & Reel (TR)
Continuous Drain Current Id
1.3A
Rds On Max Id Vgs
9 Ω @ 650mA, 10V
Current Continuous Drain Id25
1.3A Tc
Gate Charge Qg Max Vgs
8nC @ 10V
Yayın Yılı
2011
Power Dissipation
45W
Yükseklik
2.6mm
Montaj Tipi
Surface Mount
Drain To Source Breakdown Voltage
600V
Montaj
Surface Mount
Drive Voltage Max Rds On Min Rds On
10V
RoHS Durumu
ROHS3 Compliant
Fabrika Tedarik Süresi
18 Weeks
Turn Off Delay Time
20 ns
Çalışma Sıcaklığı
-50°C~150°C TJ
Radyasyon Dayanımı
No
Vgs Max
±30V
Threshold Voltage
3V
Max Junction Temperature Tj
150°C
Turn On Delay Time
10 ns

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