Volume pricing
- 1+ pcs$2.38
- 10+ pcs$2.25
- 100+ pcs$2.12
- 500+ pcs$2.00
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Number Of Elements
- 1
- Vgs Max
- ±30V
- Transistor Element Material
- SILICON
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Sayısı
- 3
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Pin Sayısı
- 3
- Seri
- aMOS™
- Pulsed Drain Currentmax Idm
- 45A
- Fabrika Tedarik Süresi
- 16 Weeks
- Kurşunsuz Kodu
- yes
- Operating Mode
- ENHANCEMENT MODE
- RoHS Durumu
- ROHS3 Compliant
- Jesd30 Code
- R-PSSO-G3
- Terminal Pozisyonu
- SINGLE
- Montaj Tipi
- Surface Mount
- Montaj
- Surface Mount
- Drive Voltage Max Rds On Min Rds On
- 10V
- Power Dissipation
- 208W
- Yayın Yılı
- 2011
- Drainsource On Resistancemax
- 0.399Ohm
- Gate Charge Qg Max Vgs
- 11nC @ 10V
- Case Connection
- DRAIN
- REACH Uyumluluk Kodu
- not_compliant
- Drain To Source Voltage Vdss
- 600V
- Rds On Max Id Vgs
- 399m Ω @ 3.8A, 10V
- Current Continuous Drain Id25
- 11A Tc
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- JESD-609 Kodu
- e3
- Ds Breakdown Voltagemin
- 600V
- Continuous Drain Current Id
- 11A
- Ambalaj
- Tape & Reel (TR)
- Terminal Kaplaması
- Tin (Sn)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Input Capacitance Ciss Max Vds
- 545pF @ 100V
- Transistor Application
- SWITCHING
- Gate To Source Voltage Vgs
- 30V
- Fet Type
- N-Channel
- Parça Durumu
- Not For New Designs
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