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Specifications
- Gate To Source Voltage Vgs
- 20V
- Yayın Yılı
- 2013
- Gate Charge Qg Max Vgs
- 8.6nC @ 10V
- Power Dissipation
- 3.1W
- Pulsed Drain Currentmax Idm
- 50A
- Number Of Elements
- 1
- Fet Type
- N-Channel
- Vgs Max
- ±20V
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Rds On Max Id Vgs
- 23m Ω @ 10A, 10V
- Terminal Sayısı
- 8
- Drainsource On Resistancemax
- 0.023Ohm
- Pin Sayısı
- 8
- Ds Breakdown Voltagemin
- 30V
- Current Continuous Drain Id25
- 10A Ta
- Terminal Formu
- GULL WING
- Pin Sayısı
- 8
- Qualification Status
- Not Qualified
- Montaj Tipi
- Surface Mount
- Parça Durumu
- Not For New Designs
- Terminal Pozisyonu
- DUAL
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Element Material
- SILICON
- Input Capacitance Ciss Max Vds
- 448pF @ 15V
- Transistor Application
- SWITCHING
- Ambalaj
- Tape & Reel (TR)
- Vgsth Max Id
- 2.6V @ 250μA
- Montaj
- Surface Mount
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Continuous Drain Current Id
- 10A
- Power Dissipation Max
- 3.1W Ta
- Operating Mode
- ENHANCEMENT MODE
- Drain To Source Voltage Vdss
- 30V
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- RoHS Durumu
- ROHS3 Compliant
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
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