Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- RoHS Durumu
- ROHS3 Compliant
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Drain To Source Voltage Vdss
- 60V
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation Max
- 3.1W Ta
- Continuous Drain Current Id
- 6.2A
- Kurşunsuz Kodu
- yes
- Montaj
- Surface Mount
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Vgsth Max Id
- 3V @ 250μA
- Ambalaj
- Tape & Reel (TR)
- Transistor Application
- SWITCHING
- Input Capacitance Ciss Max Vds
- 2900pF @ 30V
- Fabrika Tedarik Süresi
- 18 Weeks
- Transistor Element Material
- SILICON
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Pozisyonu
- DUAL
- Parça Durumu
- Active
- Montaj Tipi
- Surface Mount
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 8
- Current Continuous Drain Id25
- 6.2A Ta
- Ds Breakdown Voltagemin
- 60V
- Pin Sayısı
- 8
- Terminal Formu
- GULL WING
- Drainsource On Resistancemax
- 0.04Ohm
- ECCN Kodu
- EAR99
- Terminal Sayısı
- 8
- Rds On Max Id Vgs
- 40m Ω @ 6.2A, 10V
- Fet Type
- P-Channel
- Vgs Max
- ±20V
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Gate Charge Qg Max Vgs
- 55nC @ 10V
- Power Dissipation
- 3.1W
- Number Of Elements
- 1
- Gate To Source Voltage Vgs
- 20V
- Yayın Yılı
- 2010
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