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Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Number Of Elements
- 1
- Gate Charge Qg Max Vgs
- 12nC @ 4.5V
- Power Dissipation
- 3.1W
- Gate To Source Voltage Vgs
- 12V
- Terminal Sayısı
- 8
- Rds On Max Id Vgs
- 24m Ω @ 8.5A, 10V
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Fet Type
- N-Channel
- Vgs Max
- ±12V
- Terminal Formu
- GULL WING
- Ds Breakdown Voltagemin
- 30V
- Pin Sayısı
- 8
- Current Continuous Drain Id25
- 8.5A Ta
- ECCN Kodu
- EAR99
- Drainsource On Resistancemax
- 0.03Ohm
- Montaj Tipi
- Surface Mount
- Pin Sayısı
- 8
- Qualification Status
- Not Qualified
- Transistor Element Material
- SILICON
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Pozisyonu
- DUAL
- Parça Durumu
- Not For New Designs
- Vgsth Max Id
- 1.5V @ 250μA
- Ambalaj
- Tape & Reel (TR)
- Transistor Application
- SWITCHING
- Input Capacitance Ciss Max Vds
- 1100pF @ 15V
- Power Dissipation Max
- 3.1W Ta
- Continuous Drain Current Id
- 8.5A
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Montaj
- Surface Mount
- Drive Voltage Max Rds On Min Rds On
- 2.5V 10V
- RoHS Durumu
- ROHS3 Compliant
- Drain To Source Voltage Vdss
- 30V
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Operating Mode
- ENHANCEMENT MODE
- Feedback Capmax Crss
- 70 pF
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