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RoHS
Compliant
Support
Technical team support
Specifications
- Vce Saturation Max Ib Ic
- 1V @ 70mA, 700mA
- Package Height
- 16
- Transistor Application
- AMPLIFIER
- Configuration
- Single
- Yayın Yılı
- 1999
- Category
- Bipolar Power
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Maximum Operating Temperature C
- 150
- Number Of Elements Per Chip
- 1
- Tip
- PNP
- Collectoremitter Breakdown Voltage
- 180V
- Kılıf / Paket
- TO-220-3 Full Pack
- Lead Shape
- Through Hole
- Maximum Collectoremitter Voltage V
- 180
- Power Dissipation
- 20W
- Pin Sayısı
- 3
- Package Width
- 4.2
- Eccn Us
- EAR99
- Terminal Sayısı
- 3
- Collector Emitter Voltage Vceo
- 1V
- Dc Current Gain Hfe Min Ic Vce
- 60 @ 700mA 10V
- Transistor Type
- PNP
- ECCN Kodu
- EAR99
- Kurşunsuz
- Lead Free
- Pcb Changed
- 3
- Maximum Dc Collector Current A
- 2
- Material
- Si
- Case Connection
- ISOLATED
- Supplier Package
- TO-220F
- Transistor Element Material
- SILICON
- Kurşunsuz Kodu
- yes
- Max Power Dissipation
- 20W
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Transition Frequency
- 60MHz
- Ambalaj
- Bulk
- Emitter Base Voltage Vebo
- 6V
- Frekans
- 60MHz
- Number Of Elements
- 1
- Maximum Collector Base Voltage V
- 180
- Maximum Power Dissipation Mw
- 20000
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