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JANTX2N5794U

Single BJT Transistors

In StockRoHS: Compliant

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Specifications

Vce Saturation Max Ib Ic
900mV @ 30mA, 300mA
Automotive
No
Standard Package Name
SMD
Voltage Collector Emitter Breakdown Max
40V
Minimum Operating Temperature C
-65
Maximum Collectoremitter Voltage V
40
Number Of Elements Per Chip
2
Transistor Polarity
Dual NPN
Tedarikçi Cihaz Paketi
6-SMD
Dc Current Gain Hfe Min Ic Vce
100 @ 150mA, 10V
Package Height
2.54(Max)
Technology
Si
Maximum Power Dissipation Mw
600
Temel Ürün No
2N5794
Eccn Us
EAR99
Fabrika Paket Adedi
1
Supplier Temperature Grade
Military
Parça Durumu
Active
Pcb Changed
6
Maximum Collector Base Voltage V
75
Paket
Bulk
Package Width
4.45(Max)
Ürün Durumu
Active
Seri
Military, MIL-PRF-19500/495
Kılıf / Paket
6-SMD, No Lead
Maximum Collectoremitter Saturation Voltage V
0.3@15mA@150mA|0.9@30mA@300mA
Supplier Package
CSMD
Minimum Dc Current Gain
35@0.1mA@10V|50@1mA@10V|75@10mA@10V|100@150mA@10V|40@300mA@10V|50@150mA@1V
Configuration
Dual
Çalışma Sıcaklığı
-65°C ~ 200°C (TJ)
RoHS
N
Maximum Operating Temperature C
200
Category
Bipolar Power
Ppap
No
Lead Shape
No Lead
Current Collector Cutoff Max
10µA (ICBO)
Material
Si
Ürün Tipi
BJTs - Bipolar Transistors
Tip
NPN
Transistor Type
2 NPN (Dual)

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