IRF9530

Teknik Özellikler

Vgsth Max Id

4V @ 250μA

Pcb Changed

3

Typical Gate Charge10v Nc

25

Rds On Max

300 mΩ

Number Of Elements

1

Ambalaj

Tube

Drain To Source Breakdown Voltage

-100V

Turn Off Delay Time

31 ns

Gate Charge Qg Max Vgs

38nC @ 10V

Standard Package Name

TO-220

Channel Type

P

Number Of Channels

1

Maximum Gate Source Voltage V

±20

Kılıf / Paket

TO-220-3

Radyasyon Dayanımı

No

Tab

Tab

Pin Sayısı

3

Maximum Operating Temperature C

150

Maximum Continuous Drain Current A

12

Maximum Drain Source Voltage V

100

Current Continuous Drain Id25

12A Tc

Rds On Max Id Vgs

300mOhm @ 7.2A, 10V

Input Capacitance

860pF

Channel Mode

Enhancement

Fall Time Typ

39 ns

Automotive

No

Typical Gate Charge Vgs Nc

25@10V

Typical Rise Time Ns

70

Maximum Power Dissipation Mw

75000

Kurşunsuz

Contains Lead

Genişlik

4.7mm

Configuration

Single

Package Width

4.57(Max)

Category

Power MOSFET

Min. Çalışma Sıcaklığı

-55°C

Montaj Tipi

Through Hole

Fet Type

P-Channel

Vgs Max

±20V

Parça Durumu

Obsolete

Drain To Source Voltage Vdss

100V