2N7000-D26Z

Teknik Özellikler

Qualification Status

Not Qualified

Yüzey Montaj

NO

Drain Currentmax Abs Id

0.2A

Vgs Max

±20V

RoHS Durumu

ROHS3 Compliant

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Through Hole

Temel Parça No

2N7000

Current Continuous Drain Id25

200mA Ta

Vgsth Max Id

3V @ 1mA

Jesd30 Code

O-PBCY-T3

Terminal Pozisyonu

BOTTOM

Rds On Max Id Vgs

5 Ω @ 500mA, 10V

Kurşunsuz Kodu

yes

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

1

Parça Durumu

Active

Power Dissipation Max

400mW Ta

Yayın Yılı

2011

Transistor Element Material

SILICON

Kılıf / Paket

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Çalışma Sıcaklığı

-55°C~150°C TJ

Fet Type

N-Channel

Ambalaj

Tape & Reel (TR)

Feedback Capmax Crss

5 pF

Ds Breakdown Voltagemin

60V

Drainsource On Resistancemax

5Ohm

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Terminal Sayısı

3

Drain To Source Voltage Vdss

60V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Input Capacitance Ciss Max Vds

50pF @ 25V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fabrika Tedarik Süresi

11 Weeks

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE