TPH4R50ANH1,LQ

Teknik Özellikler

Seri

U-MOSVIII-H

Çalışma Sıcaklığı

150°C

Current Continuous Drain Id25

92A (Tc)

Rds On Drainsource Resistance

4.5 mOhms

Fet Type

N-Channel

Ambalaj

MouseReel

Ürün Durumu

Active

Fabrika Paket Adedi

5000

Qg Gate Charge

58 nC

Rds On Max Id Vgs

4.5mOhm @ 46A, 10V

Maks. Çalışma Sıcaklığı

+ 150 C

RoHS

Details

Transistor Polarity

N-Channel

Drive Voltage Max Rds On Min Rds On

10V

Pd Power Dissipation

170 W

Gate Charge Qg Max Vgs

58 nC @ 10 V

Input Capacitance Ciss Max Vds

5200 pF @ 50 V

Kılıf / Paket

8-PowerTDFN

Vgs Gatesource Voltage

- 20 V, + 20 V

Power Dissipation Max

800mW (Ta)

Tedarikçi Cihaz Paketi

8-SOP Advance (5x5.75)

Montaj Tipi

Surface Mount

Vgsth Max Id

4V @ 1mA

Vgs Th Gatesource Threshold Voltage

4 V

Drain To Source Voltage Vdss

100 V

Id Continuous Drain Current

92 A

Ürün Tipi

MOSFET

Number Of Channels

1 Channel

Channel Mode

Enhancement

Rise Time

9.6 ns

Vgs Max

±20V

Montaj Stili

SMD/SMT

Vds Drainsource Breakdown Voltage

100 V