TJ8S06M3L,LXHQ

Teknik Özellikler

Montaj Stili

SMD/SMT

Channel Mode

Enhancement

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

175°C

Transistor Polarity

P-Channel

Drain To Source Voltage Vdss

60 V

Qualification

AEC-Q101

Rds On Max Id Vgs

104mOhm @ 4A, 10V

Power Dissipation Max

27W (Tc)

Vds Drainsource Breakdown Voltage

60 V

Input Capacitance Ciss Max Vds

890 pF @ 10 V

Typical Turnon Delay Time

14 ns

Temel Ürün No

TJ8S06

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Rds On Drainsource Resistance

104 mOhms

Gate Charge Qg Max Vgs

19 nC @ 10 V

Fet Type

P-Channel

Pd Power Dissipation

27 W

Fabrika Paket Adedi

2000

Rise Time

6 ns

Vgs Gatesource Voltage

- 20 V, + 10 V

Drive Voltage Max Rds On Min Rds On

6V, 10V

Ürün Durumu

Active

Maks. Çalışma Sıcaklığı

+ 175 C

RoHS

Details

Id Continuous Drain Current

8 A

Vgsth Max Id

3V @ 1mA

Qg Gate Charge

19 nC

Number Of Channels

1 Channel

Typical Turnoff Delay Time

140 ns

Vgs Th Gatesource Threshold Voltage

3 V

Transistor Type

1 P-Channel

Seri

U-MOSVI

Ambalaj

Cut Tape

Tedarikçi Cihaz Paketi

DPAK+

Current Continuous Drain Id25

8A (Ta)

Birim Ağırlık

0.012699 oz

Vgs Max

+10V, -20V

Part Aliases

TJ8S06M3L,LXHQ(O

Ürün Tipi

MOSFET