TJ80S04M3L,LXHQ

Teknik Özellikler

Channel Mode

Enhancement

Montaj Stili

SMD/SMT

Transistor Polarity

P-Channel

Çalışma Sıcaklığı

175°C

Montaj Tipi

Surface Mount

Rds On Max Id Vgs

5.2mOhm @ 40A, 10V

Qualification

AEC-Q101

Drain To Source Voltage Vdss

40 V

Power Dissipation Max

100W (Tc)

Vds Drainsource Breakdown Voltage

40 V

Typical Turnon Delay Time

125 ns

Temel Ürün No

TJ80S04

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Input Capacitance Ciss Max Vds

7770 pF @ 10 V

Rds On Drainsource Resistance

5.2 mOhms

Gate Charge Qg Max Vgs

158 nC @ 10 V

Fet Type

P-Channel

Fabrika Paket Adedi

2000

Pd Power Dissipation

100 W

Rise Time

100 ns

Vgs Gatesource Voltage

- 20 V, + 10 V

Maks. Çalışma Sıcaklığı

+ 175 C

Ürün Durumu

Active

RoHS

Details

Drive Voltage Max Rds On Min Rds On

6V, 10V

Qg Gate Charge

158 nC

Vgsth Max Id

3V @ 1mA

Id Continuous Drain Current

80 A

Typical Turnoff Delay Time

970 ns

Number Of Channels

1 Channel

Tedarikçi Cihaz Paketi

DPAK+

Ambalaj

Cut Tape

Seri

U-MOSVI

Current Continuous Drain Id25

80A (Ta)

Transistor Type

1 P-Channel

Vgs Th Gatesource Threshold Voltage

3 V

Birim Ağırlık

0.012699 oz

Vgs Max

+10V, -20V

Part Aliases

TJ80S04M3L,LXHQ(O

Ürün Tipi

MOSFET