TJ30S06M3L(T6L1,NQ

Teknik Özellikler

Drive Voltage Max Rds On Min Rds On

6V 10V

Configuration

SINGLE WITH BUILT-IN DIODE

Pin Sayısı

3

Montaj

Surface Mount

Terminal Sayısı

2

Vgsth Max Id

3V @ 1mA

Fabrika Tedarik Süresi

12 Weeks

Transistor Application

SWITCHING

Case Connection

DRAIN

Rise Time

43ns

Fall Time Typ

118 ns

Parça Durumu

Active

Ds Breakdown Voltagemin

60V

Vgs Max

+10V, -20V

RoHS Durumu

RoHS Compliant

Yayın Yılı

2009

Radyasyon Dayanımı

No

Number Of Elements

1

Current Continuous Drain Id25

30A Ta

Seri

U-MOSVI

Ambalaj

Tape & Reel (TR)

Jesd30 Code

R-PSSO-G2

Rds On Max Id Vgs

21.8m Ω @ 15A, 10V

Drainsource On Resistancemax

0.028Ohm

Drain To Source Voltage Vdss

60V

Terminal Pozisyonu

SINGLE

Transistor Element Material

SILICON

Pulsed Drain Currentmax Idm

60A

Continuous Drain Current Id

30A

Terminal Formu

GULL WING

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

175°C TJ

Operating Mode

ENHANCEMENT MODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Avalanche Energy Rating Eas

71 mJ

Gate To Source Voltage Vgs

10V

Fet Type

P-Channel

Gate Charge Qg Max Vgs

80nC @ 10V

Reference Standard

AEC-Q101

Power Dissipation Max

68W Tc