SSM3K16FV,L3F

Teknik Özellikler

Drain To Source Voltage Vdss

20 V

Typical Turnon Delay Time

70 ns

Transistor Polarity

N-Channel

Ambalaj

Cut Tape

Rds On Drainsource Resistance

3 Ohms

Fabrika Paket Adedi

8000

Channel Type

N

Number Of Channels

1 Channel

Ürün Tipi

MOSFET

Çalışma Sıcaklığı

150°C

Forward Transconductance Min

40 mS

Montaj Stili

SMD/SMT

Fet Type

N-Channel

Vgsth Max Id

1.1V @ 100μA

Ürün Durumu

Active

Vds Drainsource Breakdown Voltage

20 V

Pd Power Dissipation

150 mW

Birim Ağırlık

0.000053 oz

Current Continuous Drain Id25

100mA (Ta)

Drive Voltage Max Rds On Min Rds On

1.5V, 4V

Vgs Th Gatesource Threshold Voltage

600 mV

Vgs Gatesource Voltage

- 10 V, + 10 V

Typical Turnoff Delay Time

125 ns

RoHS

Details

Input Capacitance Ciss Max Vds

9.3 pF @ 3 V

Maks. Çalışma Sıcaklığı

+ 150 C

Rds On Max Id Vgs

3Ohm @ 10mA, 4V

Continuous Drain Current Id

0.1

Id Continuous Drain Current

100 mA

Channel Mode

Enhancement

Montaj Tipi

Surface Mount

Configuration

Single

Tedarikçi Cihaz Paketi

VESM

Vgs Max

±10V

Power Dissipation Max

150mW (Ta)

Kılıf / Paket

SOT-723

Tradename

MOSVI