Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Ds Breakdown Voltagemin
- 60 V
- Transistor Element Material
- SILICON
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Number Of Terminals
- 3
- Polaritychannel Type
- N-CHANNEL
- Operating Mode
- ENHANCEMENT MODE
- Additional Feature
- LOGIC LEVEL COMPATIBLE
- Configuration
- SINGLE
- Package Shape
- RECTANGULAR
- Üretici Parça No
- 2SK1379
- Qualification Status
- Not Qualified
- Risk Rank
- 5.82
- Drain Currentmax Id
- 50 A
- Power Dissipation Ambientmax
- 150 W
- Yüzey Montaj
- NO
- Terminal Pozisyonu
- SINGLE
- Number Of Elements
- 1
- Case Connection
- DRAIN
- Package Body Material
- PLASTIC/EPOXY
- Package Style
- FLANGE MOUNT
- ECCN Kodu
- EAR99
- Ihs Manufacturer
- TOSHIBA CORP
- Drainsource On Resistancemax
- 0.025 Ω
- Terminal Formu
- THROUGH-HOLE
- REACH Uyumluluk Kodu
- unknown
- Package Description
- FLANGE MOUNT, R-PSFM-T3
- Transistor Application
- SWITCHING
- Part Life Cycle Code
- Obsolete
- Jesd30 Code
- R-PSFM-T3
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