CSD25480F3T

Teknik Özellikler

Kılıf / Paket

3-SMD, No Lead

Gate Charge Qg Max Vgs

0.91nC @ 10V

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

6 Weeks

Fet Type

P-Channel

Drainsource On Resistancemax

0.26Ohm

Feedback Capmax Crss

4.7 pF

Lifecycle Status

ACTIVE (Last Updated: 6 days ago)

Uzunluk

690μm

Terminal Sayısı

3

Drain To Source Voltage Vdss

20V

Ds Breakdown Voltagemin

20V

Threshold Voltage

-950mV

Element Configuration

Single

Vgsth Max Id

1.2V @ 250μA

Pin Sayısı

3

Ambalaj

Tape & Reel (TR)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Genişlik

600μm

Kurşunsuz Kodu

yes

Continuous Drain Current Id

1.7A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Terminal Pozisyonu

BOTTOM

Number Of Elements

1

Reach Svhc

No SVHC

Parça Durumu

Active

Temel Parça No

CSD25480

Power Dissipation Max

500mW Ta

Montaj Tipi

Surface Mount

Kurşunsuz

Lead Free

Montaj

Surface Mount

Vgs Max

-12V

Tepe Reflow Sıcaklığı (°C)

260

Drive Voltage Max Rds On Min Rds On

1.8V 8V

Seri

FemtoFET™

Thickness

345μm

Rds On Max Id Vgs

132m Ω @ 400mA, 8V