CSD23203WT

Teknik Özellikler

Contact Plating

Copper, Silver, Tin

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Reach Svhc

No SVHC

Drain To Source Breakdown Voltage

-8V

Parça Durumu

Active

Terminal Pozisyonu

BOTTOM

Number Of Elements

1

Seri

NexFET™

Thickness

2mm

Input Capacitance Ciss Max Vds

914pF @ 4V

Rds On Max Id Vgs

19.4m Ω @ 1.5A, 4.5V

Current Continuous Drain Id25

3A Ta

Gate To Source Voltage Vgs

-6V

Montaj

Surface Mount

Turn Off Delay Time

58 ns

Drainsource On Resistancemax

0.053Ohm

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Rise Time

12ns

Gate Charge Qg Max Vgs

6.3nC @ 4.5V

Kılıf / Paket

6-UFBGA, DSBGA

Fabrika Tedarik Süresi

6 Weeks

Transistor Element Material

SILICON

Ambalaj

Tape & Reel (TR)

Continuous Drain Current Id

3A

Lifecycle Status

ACTIVE (Last Updated: 5 days ago)

Uzunluk

1.5mm

Turn On Delay Time

14 ns

Temel Parça No

CSD23203

Power Dissipation Max

750mW Ta

Kurşunsuz

Lead Free

Montaj Tipi

Surface Mount

Drive Voltage Max Rds On Min Rds On

1.8V 4.5V

Çalışma Sıcaklığı

-55°C~150°C TJ

Fall Time Typ

27 ns

Yükseklik

1mm

Weight

1.700971mg

Feedback Capmax Crss

172 pF

Drain Currentmax Abs Id

3A

Fet Type

P-Channel