CSD19532KTTT

Teknik Özellikler

Ambalaj

Tape & Reel (TR)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Case Connection

DRAIN

Continuous Drain Current Id

200A

Ds Breakdown Voltagemin

100V

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Uzunluk

10.18mm

REACH Uyumluluk Kodu

not_compliant

Drainsource On Resistancemax

0.0066Ohm

Terminal Kaplaması

Matte Tin (Sn)

Gate Charge Qg Max Vgs

57nC @ 10V

Kılıf / Paket

TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

Fabrika Tedarik Süresi

12 Weeks

Transistor Element Material

SILICON

Seri

NexFET™

Thickness

4.44mm

Input Capacitance Ciss Max Vds

5060pF @ 50V

Rds On Max Id Vgs

5.6m Ω @ 90A, 10V

Current Continuous Drain Id25

200A Ta

Montaj

Surface Mount

Tepe Reflow Sıcaklığı (°C)

260

Vgs Max

±20V

Avalanche Energy Rating Eas

259 mJ

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Parça Durumu

Active

Number Of Elements

1

Pulsed Drain Currentmax Idm

400A

JESD-609 Kodu

e3

Nem Hassasiyeti (MSL)

2 (1 Year)

Transistor Application

SWITCHING

Genişlik

8.41mm

Kurşunsuz Kodu

yes

Drain To Source Voltage Vdss

100V

Element Configuration

Single

Terminal Sayısı

2

Pin Sayısı

3

Vgsth Max Id

3.2V @ 250μA

Additional Feature

AVALANCHE RATED

Feedback Capmax Crss

18 pF