CSD19531Q5AT

Teknik Özellikler

Turn Off Delay Time

18.4 ns

Fabrika Tedarik Süresi

8 Weeks

Transistor Element Material

SILICON

Gate Charge Qg Max Vgs

48nC @ 10V

Rise Time

5.8ns

Kılıf / Paket

8-PowerTDFN

Continuous Drain Current Id

100A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ambalaj

Tape & Reel (TR)

Case Connection

DRAIN

REACH Uyumluluk Kodu

not_compliant

Turn On Delay Time

6 ns

Uzunluk

4.9mm

Lifecycle Status

ACTIVE (Last Updated: 5 days ago)

Contact Plating

Tin

Parça Durumu

Active

Reach Svhc

No SVHC

Drain To Source Breakdown Voltage

100V

Number Of Elements

1

Terminal Pozisyonu

DUAL

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Input Capacitance Ciss Max Vds

3870pF @ 50V

Current Continuous Drain Id25

100A Ta

Rds On Max Id Vgs

6.4m Ω @ 16A, 10V

Thickness

1mm

Seri

NexFET™

Tepe Reflow Sıcaklığı (°C)

260

Vgs Max

±20V

Montaj

Surface Mount

Gate To Source Voltage Vgs

20V

ECCN Kodu

EAR99

Additional Feature

AVALANCHE RATED

Fet Type

N-Channel

Terminal Formu

NO LEAD

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kurşunsuz Kodu

yes

Genişlik

6mm

Pulsed Drain Currentmax Idm

337A