CSD19503KCS

Teknik Özellikler

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Reach Svhc

No SVHC

Parça Durumu

Active

Number Of Elements

1

Contact Plating

Tin

Gate To Source Voltage Vgs

20V

Montaj

Through Hole

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Vgs Max

±20V

Seri

NexFET™

Thickness

4.58mm

Input Capacitance Ciss Max Vds

2730pF @ 40V

Rds On Max Id Vgs

9.2m Ω @ 60A, 10V

Current Continuous Drain Id25

100A Ta

Rise Time

3ns

Gate Charge Qg Max Vgs

36nC @ 10V

Kılıf / Paket

TO-220-3

Fabrika Tedarik Süresi

6 Weeks

Transistor Element Material

SILICON

Turn Off Delay Time

11 ns

Ds Breakdown Voltagemin

80V

Lifecycle Status

ACTIVE (Last Updated: 6 days ago)

Uzunluk

10.16mm

Turn On Delay Time

7 ns

REACH Uyumluluk Kodu

not_compliant

Ambalaj

Tube

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Case Connection

DRAIN

Continuous Drain Current Id

100A

Number Of Channels

1

Temel Parça No

CSD19503

Power Dissipation Max

188W Tc

Kurşunsuz

Lead Free

Montaj Tipi

Through Hole

Yükseklik

4.7mm

Drive Voltage Max Rds On Min Rds On

6V 10V

Çalışma Sıcaklığı

-55°C~175°C TJ

Fall Time Typ

2 ns

Fet Type

N-Channel