CSD18532Q5BT

Teknik Özellikler

Rise Time

7.2ns

Gate Charge Qg Max Vgs

58nC @ 10V

Kılıf / Paket

8-PowerTDFN

Fabrika Tedarik Süresi

6 Weeks

Transistor Element Material

SILICON

Turn Off Delay Time

22 ns

Drainsource On Resistancemax

0.0043Ohm

Ds Breakdown Voltagemin

60V

Lifecycle Status

ACTIVE (Last Updated: 5 days ago)

Uzunluk

5mm

REACH Uyumluluk Kodu

not_compliant

Turn On Delay Time

5.8 ns

Ambalaj

Tape & Reel (TR)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Case Connection

DRAIN

Continuous Drain Current Id

100A

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Parça Durumu

Active

Terminal Pozisyonu

DUAL

Number Of Elements

1

Avalanche Energy Rating Eas

320 mJ

Contact Plating

Tin

Gate To Source Voltage Vgs

20V

Montaj

Surface Mount

Tepe Reflow Sıcaklığı (°C)

260

Vgs Max

±20V

Seri

NexFET™

Thickness

950μm

Input Capacitance Ciss Max Vds

5070pF @ 30V

Rds On Max Id Vgs

3.2m Ω @ 25A, 10V

Current Continuous Drain Id25

100A Ta

Fet Type

N-Channel

Terminal Formu

NO LEAD

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Feedback Capmax Crss

17 pF

ECCN Kodu

EAR99

Drain Currentmax Abs Id

23A

Drain To Source Voltage Vdss

60V

Element Configuration

Single