CSD18532NQ5B

Teknik Özellikler

Kılıf / Paket

8-PowerTDFN

Gate Charge Qg Max Vgs

64nC @ 10V

Rise Time

8.7ns

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

6 Weeks

Radyasyon Dayanımı

No

Drainsource On Resistancemax

0.0044Ohm

Turn Off Delay Time

20 ns

Uzunluk

5mm

Lifecycle Status

ACTIVE (Last Updated: 5 days ago)

Turn On Delay Time

8.2 ns

Case Connection

DRAIN

Ambalaj

Tape & Reel (TR)

Continuous Drain Current Id

100A

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Number Of Elements

1

Terminal Pozisyonu

DUAL

Parça Durumu

Active

Drain To Source Breakdown Voltage

60V

Contact Plating

Tin

Avalanche Energy Rating Eas

360 mJ

Montaj

Surface Mount

Gate To Source Voltage Vgs

20V

Vgs Max

±20V

Tepe Reflow Sıcaklığı (°C)

260

Thickness

950μm

Seri

NexFET™

Current Continuous Drain Id25

22A Ta 100A Tc

Rds On Max Id Vgs

3.4m Ω @ 25A, 10V

Input Capacitance Ciss Max Vds

5340pF @ 30V

Fet Type

N-Channel

Additional Feature

AVALANCHE RATED

Drain Currentmax Abs Id

22A

ECCN Kodu

EAR99

Terminal Sayısı

5

Element Configuration

Single

Vgsth Max Id

3.4V @ 250μA

Pin Sayısı

8

JESD-609 Kodu

e3