CSD18511Q5AT

Teknik Özellikler

Genişlik

6mm

Kurşunsuz Kodu

yes

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

JESD-609 Kodu

e3

Case Connection

DRAIN

Ambalaj

Tape & Reel (TR)

Pulsed Drain Currentmax Idm

400A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

REACH Uyumluluk Kodu

not_compliant

Vgsth Max Id

2.45V @ 250μA

Pin Sayısı

8

Lifecycle Status

ACTIVE (Last Updated: 4 days ago)

Terminal Sayısı

5

Uzunluk

4.9mm

Drain To Source Voltage Vdss

40V

Element Configuration

Single

Ds Breakdown Voltagemin

40V

Drainsource On Resistancemax

0.0035Ohm

Drain Currentmax Abs Id

27A

Feedback Capmax Crss

309 pF

Additional Feature

AVALANCHE RATED

Transistor Element Material

SILICON

Terminal Formu

NO LEAD

Fabrika Tedarik Süresi

6 Weeks

Fet Type

N-Channel

Kılıf / Paket

8-PowerTDFN

Terminal Kaplaması

Matte Tin (Sn)

Gate Charge Qg Max Vgs

63nC @ 10V

Rds On Max Id Vgs

3.5m Ω @ 24A, 4.5V

Current Continuous Drain Id25

159A Tc

Çalışma Sıcaklığı

-55°C~150°C TJ

Input Capacitance Ciss Max Vds

5850pF @ 10V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Seri

NexFET™

Thickness

1mm

Vgs Max

±20V

Tepe Reflow Sıcaklığı (°C)

260

Power Dissipation Max

104W Tc

Montaj Tipi

Surface Mount