CSD18504KCS

Teknik Özellikler

Seri

NexFET™

Thickness

4.58mm

Input Capacitance Ciss Max Vds

1800pF @ 20V

Rds On Max Id Vgs

7m Ω @ 40A, 10V

Current Continuous Drain Id25

53A Ta 100A Tc

Gate To Source Voltage Vgs

20V

Montaj

Through Hole

Vgs Max

±20V

Avalanche Energy Rating Eas

88 mJ

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Reach Svhc

No SVHC

Drain To Source Breakdown Voltage

40V

Parça Durumu

Active

Number Of Elements

1

Ambalaj

Tube

Case Connection

DRAIN

Continuous Drain Current Id

85A

Lifecycle Status

ACTIVE (Last Updated: 5 days ago)

Uzunluk

10.16mm

Turn On Delay Time

4.4 ns

Radyasyon Dayanımı

No

Turn Off Delay Time

11.2 ns

Terminal Kaplaması

Matte Tin (Sn)

Rise Time

5.2ns

Gate Charge Qg Max Vgs

25nC @ 10V

Kılıf / Paket

TO-220-3

Fabrika Tedarik Süresi

6 Weeks

Transistor Element Material

SILICON

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Fall Time Typ

4.2 ns

Yükseklik

4.7mm

Temel Parça No

CSD18504

Power Dissipation Max

115W Tc

Kurşunsuz

Lead Free

Montaj Tipi

Through Hole

Power Dissipation

93W

JESD-609 Kodu

e3

Nem Hassasiyeti (MSL)

1 (Unlimited)